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Datasheet PROFET BTS 723 GW Smart High-Side Power Switch Two Channels: 2 x 100m Status Feedback Suitable for 42V
Product Summary
Operating Voltage Vbb(on) Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) 7.0 ... 58V One two parallel 105m 53m 2.9A 4.2A 8A 8A
Package
P-DSO-14
General Description
* * * N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS 80V technology. Providing embedded protective functions An array of resistors is integrated in order to reduce the external components
Applications
* * * * C compatible high-side power switch with diagnostic feedback for 12V and 24V and 42V grounded loads All types of resistive, inductive and capacitive loads Most suitable for inductive loads Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
* * * * * * * CMOS compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behaviour at undervoltage Wide operating voltage range Logic ground independent from load ground Optimized inverscurrent capability
Block Diagram
Status pull up voltage IN1 ST1 Vbb
Protection Functions
* * * * * * * * Short circuit protection Overload protection Current limitation Thermal shutdown Overvoltage protection (including load dump) with external resistor Reverse battery protection with external resistor Loss of ground and loss of Vbb protection Electrostatic discharge protection (ESD)
Logic Channel 1 Logic Channel 2
OUT 1 Load 1 OUT 2 Load 2
IN2 ST2
Diagnostic Function
* * * *
PROFET Diagnostic feedback with open drain output and integrated GND pull up resistors Open load detection in OFF-state Feedback of thermal shutdown in ON-state Diagnostic feedback of both channels works properly in case of inverse current
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Functional diagram
11
SPU: Pin for external Pull Up Voltage Leadframe: Vbb
1, 7, 8, 14
2 IN1
R = 20k
R = 12k
Functions and Components of inputlogic and gate-control: ESD-protection Charge pump, level shifter, rectifier Gate protection Current limit Limit for unclamped inductive loads Function and components of outputlogic Open load detection Short circuit detection Temperature sensor
OUT1
12, 13
Load 1
Load GND Vbb
3 ST1
R = 850
Status 1 Function see truthtable Logic channel one Logic channel two Function and components of inputlogic and gate-control equivalent to channel one Function and components of outputlogic equivalent to channel one Status 2 Function see truthtable Load 2
6 IN2
R = 20k
OUT2
9, 10
5 ST2
R = 850
Logic GND
PROFET
Load GND
4
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Pin Definitions and Functions
Pin 1,7, 8,14, 2 6 12,13 9,10 3 5 4 11 Symbol Function Positive power supply voltage. Design the wiring for the simultaneous max. short circuit Vbb currents from channel 1 to 2 and also for low thermal resistance IN1 Input 1,2 activates channel 1,2 in case of logic high signal IN2 Output 1,2 protected high-side power output OUT1 of channel 1,2. Design the wiring for the max. short circuit current; both outputpins have to be OUT2 connected in parallel for operation according this spec. ST1 Diagnostic feedback 1,2 of channel 1,2 open drain ST2 GND Logic Ground Connection for external pull up voltage source SPU for the open drain status output. Pull up resistors are integrated.
Pin configuration
(top view)
Vbb IN1 ST1 GND ST2 IN2 Vbb
1 2 3 4 5 6 7
*
14 13 12 11 10 9 8
Vbb OUT1 OUT1 SPU OUT2 OUT2 Vbb
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BTS 723 GW Maximum Ratings at Tj = 25C unless otherwise specified
Parameter Supply voltage (overvoltage protection see page 6) Supply voltage for full short circuit protection Tj,start = -40 ...+150C Output Voltage to Vbb Negative voltage slope at output Load current (Short-circuit current, see page 7) Load dump protection2) VLoadDump = VA + Vs, VA = 27 V RI3) = 8 , td = 200 ms; IN = low or high, each channel loaded with RL = 20 , Operating temperature range Storage temperature range Power dissipation (DC)5) Ta = 25C: (all channels active) Ta = 85C: Maximal switchable inductance, single pulse Vbb = 12V, Tj,start = 150C5), IL = 2.5 A, EAS = 110 mJ, 0 one channel: IL = 3.5 A, EAS = 278 mJ, 0 two parallel channels:
see diagrams on page 12
Symbol Vbb Vbb VON -dVOUT/dt IL VLoad dump4) Tj Tstg Ptot
Values 58 50 70 20 IL(LIM)1) 70 -40 ...+150 -55 ...+150 3.0 1.6
Unit V V V V/s A V C W
ZL VESD VIN IIN IST VSPU
23.0 30.0 1.0 42 2.0 2.0 42
mH
Electrostatic discharge capability (ESD):
(Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF
kV V mA V
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) Status pull up voltage
1) 2) 3) 4) 5)
Current limit is a protection function. Operation in current limitation is considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 resistor for the GND connection is recommended. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15
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BTS 723 GW Thermal Characteristics
Parameter and Conditions Symbol min Thermal resistance junction - soldering point5),6) each channel: Rthjs junction - ambient5) one channel active: Rthja all channels active: ---Values typ Max -45 41 25 --Unit
K/W
Electrical Characteristics
Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT); IL = 2 A, Vbb 7V each channel, Tj = 25C: RON Tj = 150C: two parallel channels, Tj = 25C:
see diagram, page 12
----
90 170 45
105 210 53
m
6)
Soldering point: Upper side of solder edge of device pin 15. See page 15
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Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max 2.5 4.0 -2.9 4.2 ---1.0
Unit
Nominal load current
Device on PCB7), Ta = 85C, Tj 150C Vbb = 30 V, VIN = 0, see diagram page 11
one channel active: IL(NOM) two parallel channels active:
A mA s V/s V/s
Output current while GND disconnected or pulled up 8); IL(GNDhigh)
Turn-on time9) IN Turn-off time IN RL = 12 Slew rate on 9) 10 to 30% VOUT, RL = 12 : Slew rate off 9) 70 to 40% VOUT, RL = 12 :
to 90% VOUT: ton to 10% VOUT: toff dV/dton -dV/dtoff
--1.0 1.0
-----
55 95 5 5
Operating Parameters Operating voltage Undervoltage restart of charge pump Tj =-40...+25C: Tj =+150C: Overvoltage protection10) I bb = 40 mA Standby current11) Tj =-40C...+25C: Tj =+125C12): VIN = 0; see diagram page 10 Tj =+150C: Off-State output current (included in Ibb(off)) VIN = 0; each channel Operating current 13), VIN = 5V, one channel on: all channels on:
Vbb(on) Vbb(ucp) Vbb(AZ) Ibb(off) IL(off)
7.0 --58.5 -----
-4 -63 13 25 3
58 5.5 7.0 69 23 23 35 --
V V V A A
IGND
---
1.0 2.0
1.5 3.0
mA
7)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15 8) not subject to production test, specified by design 9) See timing diagram on page 13. 10) Supply voltages higher than V bb(AZ) require an external current limit for the GND; a 150 resistor is recommended. See also VON(CL) in table of protection functions and circuit diagram on page 10. 11) Measured with load; for the whole device; all channels off 12) not subject to production test, specified by design 13) Add I , if I ST ST > 0
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Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max
Unit
Protection Functions14) Current limit, (see timing diagrams, page 13) Tj =-40C: IL(lim) Tj =25C: Tj =+150C: Repetitive short circuit current limit 15), Tj = Tjt each channel IL(SCr) two parallel channels
(see timing diagrams, page 13)
--5 ----
10 9 8 8 8 2
12 ------
A
A ms
Initial short circuit shutdown time
Tj,start =25C: toff(SC)
(see timing diagrams on page 13)
Output clamp (inductive load switch off)16)
at VON(CL) = Vbb - VOUT, IL = 1 A
Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery voltage 17) Drain-source diode voltage (Vout > Vbb) 18) IL = - 3.0 A, Tj = +150C Inverse current 19) GND current in case of 3A inverse current 20)
VON(CL) Tjt
Tjt
59 150 --
64 -10
70 ---
V C K
-Vbb -VON
---
-650
24 --
V mV
IGND(inv cur)
--
--
15
mA
14)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 15) not subject to production test, specified by design 16) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 17) Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 10). 18) not subject to production test, specified by design 19) not subject to production test, specified by design 20) In case of an inverse current of 3A the both status outputs must not be disturbed. The neighbour channel can be switched normally; not all paramters lay within the range of the spec Please note, that in case of an inverse current no protection function is active. The power dissipation is higher compared to normal operation in forward mode due to the voltage drop across the drain-source diode (as it is with reverse polaritiy). If this mode lasts for a too long time the device can be destroyed.
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Parameter and Conditions, each of the two channels
at Tj = -40...+150C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ Max
Unit
Diagnostic Characteristics Open load detection current 21) Open load detection voltage Short circuit detection voltage 22) Vbb(pin 1,7,8,14) to OUT1 (pin 12,13) resp. Vbb(pin 1,7,8,14) to OUT2 ( pin 9,10)
IL(off) VOUT(OL) VON(SC)
-2.0 --
3 2.85 4.0
-3.7 --
A V V
Input and Status Feedback 23) Integrated resistors; Tj =25C:
(see circuit page 2)
Input turn-on threshold voltage Input turn-off threshold voltage Input threshold hysteresis Off state input current On state input current Status output (open drain) Zener limit voltage Status low voltage
Input RI Status RST Status pull up Rpull up VIN(T+) VIN(T-) VIN(T) VIN = 0.4 V: IIN(off) VIN = 5 V: IIN(on) VST(high) VSPU = 5V: VST(low)
-0.53 -1.2 1.0 -1 10 5.4 --
20 0.85 12 --0.25 -25 6.1 --
-1.2 -2.2 --15 50 -0.4
k k k V V V A A V
21) 22)
not subject to production test, specified by design not subject to production test, specified by design 23) If a ground resistor R GND is used, add the voltage drop across these resistors.
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BTS 723 GW Truth Table
Channel 1 Channel 2 Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Input 1 Input 2 level L H L H L H L H L H Output 1 Output 2 level L H VOUT > 2.7V H L L H H L L Status 1 Status 2
BTS 723
L H H H L L H H L L
Parallel switching of channel 1 and 2 is easily possible by connecting the inputs and outputs in parallel. In this mode it is recommended to use only one status.
Terms
V bb Ibb I IN1 2 I ST1 V IN1 VST1 3 ST1 IN1 Leadframe Vbb I L1 PROFET OUT1 Channel 1 GND 12,13 VOUT1 4 I GND R GND V VON1 I ST2 IN2 VST2 5 ST2 I IN2 6 IN2 Leadframe Vbb I L2 PROFET OUT2 Channel 2 GND VOUT2 9,10 VON2
Leadframe (Vbb) is connected to pin 1,7,8,14 External RGND optional; a single resistor RGND = 150 for reverse battery protection up to the max. operating voltage.
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Input circuit (ESD protection), IN1 or IN2
R IN I
Inductive and overvoltage output clamp,
OUT1 or OUT2
+Vbb VZ
ESD-ZD I GND
I
I
V
ON
OUT
The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
Status output, ST1 or ST2
Status Pull Up Voltage R ST(ON)
Power GND
VON clamped to VON(CL) = 64 V typ.
RPull up
ST
Overvolt. and reverse batt. protection
Status pull up voltage + Vbb V
RST
ESDZD
IN ST
R Status puul up RI Logic R ST
V Z1
Z2
GND
OUT
ESD-Zener diode: 6.1 V typ., RST(ON) < 250 , RST = 850 typ., Rpull up = 12 k typ. The use of ESD zener diodes as voltage clamp at DC conditions is not recommended
PROFET
GND
R GND
Signal GND
R Load
Short Circuit detection
Fault Signal at ST-Pin: VON > 4.0 V typ, no switch off by the PROFET itself, external switch off recommended!
+ V bb
Load GND
VZ1 = 6.1 V typ., VZ2 = 63 V typ., RGND = 150 ,
RI = 850 typ., RST = 20 k typ., Rpull up = 12 k typ
In case of reverse battery the load current has to be limited by the load. Temperature protection is not active
V ON
OUT
Logic unit
Short circuit detection
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Open-load detection, OUT1 or OUT2 OFF-state diagnostic condition: Open load, if VOUT > 2.7 V typ. (IN low) IL(OL) typ. 2A An external resitor can be used to increase the open load detection current
V bb V
Vbb disconnect with energized inductive load
high
IN
Vbb PROFET OUT
ST GND
ON
OFF OUT
I
V
bb
Logic unit
Open load detection
L(OL)
For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 12) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection.
Signal GND
GND disconnect
IN
Vbb PROFET OUT
ST GND V bb V IN V ST V GND
Any kind of load. Due to VGND > 0, no VST = low signal available.
GND disconnect with GND pull up
IN
Vbb PROFET OUT
ST GND
V
V bb
V IN ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available.
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Inductive load switch-off energy dissipation
E bb E AS Vbb PROFET OUT ELoad
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high RON [mOhm]
Tj = 150C 180
IN
=
ST GND ZL
{
R L
L
EL
160
ER
120 25C
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L EAS= (V + |VOUT(CL)|) 2*RL bb IL*RL
2
80
-40C
40
0
)
ln (1+ |V
OUT(CL)|
3
5
7
9
30
40
Vbb [V]
Maximum allowable load inductance for a single switch off (one channel)5)
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0 ZL [mH]
1000
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2,3,4 = low Ibb(off) [A]
45 40 35 30
100
25 20 15
10
10 5 0
1 1 2 3 4 5 6 7
-50
0
50
100
150
200
Tj [C]
IL [A]
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Timing diagrams
All channels are symmetric and consequently the diagrams are valid for channel 1 and channel 2
Figure 1a: Vbb turn on, : Figure 2b: Switching an inductive load
IN
IN
V bb
t d(bb IN)
ST
V
V
OUT
OUT
A
I
ST open drain t
L
t
A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s
Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition:
Figure 3a: Short circuit: shut down by overtempertature, reset by cooling
IN
IN
VOUT
90% t on dV/dton 10% t dV/dtoff
V OUT normal operation Output short to GND
I
off
L
I
L(lim)
I
L(SCr)
IL
ST t off(SC) t
Heating up requires several milliseconds, depending on external conditions. External shutdown in response to status fault signal recommended.
t
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Figure 4a: Overtemperature: Reset if Tj IN IN Vbb ST VON(CL)
V
V
OUT
OUT
VOUT(OL)
T
ST t
J
t
Figure 5a: Open load, : detection in OFF-state, open load occurs in off-state
IN
ST
V
OUT
VOUT(OL) I
L
normal *)
open
normal *) t
*) IL = 2 A typ. VOUT > 2.7V
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Package and Ordering Code
Standard: P-DSO-14-9
Sales Code Ordering Code BTS 723 GW Q67060-S7501
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
All dimensions in millimetres Definition of soldering point with temperature Ts: upper side of solder edge of device pin 1.
Pin 1
Printed circuit board (FR4, 1.5mm thick, one layer 70m, 6cm2 active heatsink area) as a reference for max. power dissipation Ptot, nominal load current IL(NOM) and thermal resistance Rthja
25mm
12mm
12mm
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